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MMSF3P02HD
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Not e 3)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
20
?
?
?
?
?
24
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance
(V GS = 10 Vdc, I D = 3.0 Adc)
(V GS = 4.5 Vdc, I D = 1.5 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.5 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
3.0
1.5
4.0
0.06
0.08
7.2
2.0
?
0.075
0.095
?
Vdc
mV/ ° C
W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1010
1400
pF
Output Capacitance
Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
740
260
920
490
SWITCHING CHARACTERISTICS (Not e 5)
Turn ? On Delay Time
t d(on)
?
25
50
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 3.0 Adc,
V GS = 4.5 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 3.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
135
54
84
16
40
110
97
270
108
168
32
80
220
194
Gate Charge
See Figure 8
(V DS = 16 Vdc, I D = 3.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
33
3.0
11
46
?
?
nC
Q 3
?
10
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 4)
Reverse Recovery Time
See Figure 15
Reverse Recovery Stored Charge
(I S = 3.0 Adc, V GS = 0 Vdc)
(I S = 3.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 3.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.35
0.96
76
32
44
0.133
1.75
?
?
?
?
?
Vdc
ns
m C
3. Negative sign for P ? Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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